Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates

被引：77

作者：

Chichibu, SF

Yoshida, T

Onuma, T

Nakanishi, H

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Sci Univ Tokyo, Dept Elect Engn, Noda, Chiba 2788510, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 02期

关键词：

D O I：

10.1063/1.1426238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A promising approach to obtain epitaxial films of oxide semiconductors was demonstrated, namely helicon-wave-excited-plasma sputtering epitaxy. Due to the surface-damage-free nature, completely a-axis-locked c(0001)-orientation ZnO epilayers were successfully grown on sapphire (0001) substrates having ultrasmooth surfaces with atomic steps. The ZnO epilayer exhibited a dominant near-band-edge photoluminescence (PL) peak at 300 K. Since the PL was considered to be due to the recombination of excitons bound to an impurity or a defect and certain tilting and twisting of the films were observed when Ar/O-2 were used as sputtering gases, purification and optimization of the overall process are necessary to obtain improved epilayer qualities. (C) 2002 American Institute of Physics.

引用

页码：874 / 877

页数：4

共 27 条

[1] High temperature excitonic stimulated emission from ZnO epitaxial layers [J].