Substrate dependence in the growth of epitaxial Pb1-xLaxTiO3 thin films

被引:8
作者
Kim, Y
Erbil, A
Boatner, LA
机构
[1] GEORGIA INST TECHNOL,SCH PHYS,ATLANTA,GA 30332
[2] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831
关键词
D O I
10.1063/1.117160
中图分类号
O59 [应用物理学];
学科分类号
摘要
The metalorganic chemical vapor deposition (MOCVD) technique has been applied to the growth of epitaxial Pb1-xLaxTiO3 (PLT) thin films with x=0.28. By first introducing an initial TiO2 layer, three-dimensional epitaxial PLT films were grown on the (100) surface of MgO substrate. For both KTaO3 (100) and Al2O3 (0001) substrates, heteroepitaxy was achieved without the introduction of TiO2 as the initial, intervening layer between the PLT film and the substrate. On Al2O3 substrates, PLT films with a [111] preferred orientation were grown with a good epitaxial in-plane relationship. (C) 1996 American Institute of Physics.
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页码:2187 / 2189
页数:3
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