Electron Trap Level of Cu-Doped ZnO

被引：27

作者：

Furukawa, Akio ^{[1
]}

Ogasawara, Naoto ^{[1
]}

Yokozawa, Ryoji ^{[1
]}

Tokunaga, Takahiro ^{[1
]}

机构：

[1] Tokyo Univ Sci, Dept Elect Engn, Chiba 2788510, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 12期

关键词：

Cu-doped ZnO; electron trap; magnetron sputtering; high resistivity;

D O I：

10.1143/JJAP.47.8799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron trap level of Cu-doped ZnO has been investigated. Films with Cu contents from 0.01 to 1 at. % were deposited by RF magnetron sputtering onto (0001)-oriented sapphire substrates at 300 degrees C, and annealed at 900 degrees C. The resistivity of these films was high and increased with increasing Cu content. Hall measurements carried out at high temperatures of approximately 400 degrees C showed exponential temperature dependence. The results were analyzed assuming that donors and electron traps coexist. The electron trap energy level was determined to be in the 0.30-0.35 eV range below the conduction band edge. [DOI: 10.1143/JJAP.47.8799]

引用

页码：8799 / 8801

页数：3

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