Properties of depth-profile controlled boron nitride films prepared by ion-beam assisted deposition

Boron nitride films were prepared by vapor deposition of boron and simultaneous bombardment with mixed gas ions of nitrogen and argon in the energy range of 0.2 to 20 keV, The films were prepared on various kinds of substrates including silicon wafers, tungsten carbide plates and various ceramic plates at a temperature of 400 degrees C. In the synthesis of the BN films, a boron-rich buffer layer between the substrate and the BN film was formed by energetic nitrogen ion beam bombardment, improving tribological properties such as the depth-profile controlled layer, The buffer layer improved film adhesion, and chemical stability, thermal stability at elevated temperature and corrosion resistance of the BN films also gave good results.