Size effect in mesoscopic epitaxial ferroelectric structures:: Increase of piezoelectric response with decreasing feature size

被引：203

作者：

Bühlmann, S ^{[1
]}

Dwir, B

Baborowski, J

Muralt, P

机构：

[1] Swiss Fed Inst Technol, Mat Inst, Ceram Lab, CH-1015 Lausanne, Switzerland

[2] Swiss Fed Inst Technol, Inst Photon & Quantum Elect, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 17期

关键词：

D O I：

10.1063/1.1475369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An epitaxial 200 nm thick film of Pb(Zr0.40Ti0.60)O-3 (PZT) has been deposited by reactive rf magnetron sputtering on conductive Nb-doped SrTiO3 (100) (STO). The patterning process involved electron-beam lithography of polymethylmethacrylate, fabrication of a 75 nm thick Cr hard mask layer by means of a lift-off process, and dry etching of PZT. The smallest PZT features obtained were 100 nm in lateral dimensions. Piezoelectric sensitive scanning force microscopy in the contact mode revealed a strong increase of the piezoelectric response for feature sizes with lateral dimensions below 300 nm. It is proposed that this behavior is mainly due to vanishing a domains. (C) 2002 American Institute of Physics.

引用

页码：3195 / 3197

页数：3

共 19 条

[1] Mapping the domain distribution at ferroelectric surfaces by scanning force microscopy [J].

Abplanalp, M ;

Eng, LM ;

Gunter, P .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1) :S231-S234

[2] Polarization imprint and size effects in mesoscopic ferroelectric structures [J].

Alexe, M ;

Harnagea, C ;

Hesse, D ;

Gösele, U .

APPLIED PHYSICS LETTERS, 2001, 79 (02) :242-244

[3] 100-nm lateral size ferroelectric memory cells fabricated by electron-beam direct writing [J].

Alexe, M ;

Harnagea, C ;

Erfurth, W ;

Hesse, D ;

Gösele, U .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 70 (03) :247-251

[4] Mechanisms of Pb(Zr0.53Ti0.47)O3 thin film etching with ECR/RF reactor [J].

Baborowski, J ;

Muralt, P ;

Ledermann, N ;

Colla, E ;

Seifert, A ;

Gentil, S ;

Setter, N .

INTEGRATED FERROELECTRICS, 2000, 31 (1-4) :261-271

[5] Direct observation of region by region suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin film capacitors with Pt electrodes [J].

Colla, EL ;

Hong, SB ;

Taylor, DV ;

Tagantsev, AK ;

Setter, N ;

No, K .

APPLIED PHYSICS LETTERS, 1998, 72 (21) :2763-2765

[6] Single-crystal Pb(ZrxTi1-x)O-3 thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties [J].

Foster, CM ;

Bai, GR ;

Csencsits, R ;

Vetrone, J ;

Jammy, R ;

Wills, LA ;

Carr, E ;

Amano, J .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (05) :2349-2357

[7] Scaling of ferroelectric properties in thin films [J].

Ganpule, CS ;

Stanishevsky, A ;

Su, Q ;

Aggarwal, S ;

Melngailis, J ;

Williams, E ;

Ramesh, R .

APPLIED PHYSICS LETTERS, 1999, 75 (03) :409-411

[8] Nanoscale imaging of domain dynamics and retention in ferroelectric thin films [J].

Gruverman, A ;

Tokumoto, H ;

Prakash, AS ;

Aggarwal, S ;

Yang, B ;

Wuttig, M ;

Ramesh, R ;

Auciello, O ;

Venkatesan, T .

APPLIED PHYSICS LETTERS, 1997, 71 (24) :3492-3494

[9] Domain and lattice contributions to dielectric and piezoelectric properties of Pb(Zrx,Ti1-x)O3 thin films as a function of composition [J].

Hiboux, S ;

Muralt, P ;

Maeder, T .

JOURNAL OF MATERIALS RESEARCH, 1999, 14 (11) :4307-4318

[10] Origin of voltage offset and built-in polarization in in-situ sputter deposited PZT thin films [J].

Hiboux, S ;

Muralt, P .

INTEGRATED FERROELECTRICS, 2001, 36 (1-4) :83-92

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