Detection of a Fermi level crossing in three-domain Si(111)-In(4x1)

被引:24
作者
Hill, IG [1 ]
McLean, AB [1 ]
机构
[1] Queens Univ, Dept Phys, Kingston, ON K7L 3N6, Canada
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 15期
关键词
D O I
10.1103/PhysRevB.59.9791
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using photoemission and inverse photoemission, it has recently been demonstrated that single domain Si(111)-In(4 X 1) overlayers possess a clear Fermi level crossing at approximate to 0.6<(Gamma X)over bar However, a previous inverse photoemission study, that was performed on a three domain sample, concluded that the overlayer was semiconducting. In an attempt to reconcile the results of the two inverse photoemission studies we proposed, in an earlier paper, that the first study did not probe the region of reciprocal space where the Fermi level crossing is now known to occur. In this paper we demonstrate that this suggestion is correct. Using a three domain Sill 1 1)-In(4 x 1) overlayer, we mapped along the <(Gamma K)over bar> azimuth of the 1 x I zone, which is coincident with the <(Gamma X)over bar> azimuth of the 4 X 1 zone, with inverse photoemission, and found a Fermi level crossing at approximate to 0.6<(Gamma X)over bar>. We have now detected Fermi level crossings in both single and three domain 4X1 overlayers. [S0163-1829(99)10415-6].
引用
收藏
页码:9791 / 9793
页数:3
相关论文
共 18 条
[1]  
ABUKAWA T, 1995, SURF SCI, V325, P22
[2]   LOW-VOLTAGE, HIGH-CURRENT ELECTRON-GUN [J].
ERDMAN, PW ;
ZIPF, EC .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1982, 53 (02) :225-227
[3]   Inverse photoemission studies of two quasi-one-dimensional overlayer systems [J].
Hill, IG ;
McLean, AB .
APPLIED SURFACE SCIENCE, 1998, 123 :371-375
[4]   Metallicity of In chains on Si(111) [J].
Hill, IG ;
McLean, AB .
PHYSICAL REVIEW B, 1997, 56 (24) :15725-15728
[5]   A comparison of two high performance inverse photoemission bandpass detectors [J].
Hill, IG ;
McLean, AB .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1998, 69 (01) :261-264
[6]  
HILL IG, 1997, THESIS QUEENS U
[7]   RECONSTRUCTION OF ALUMINUM AND INDIUM OVERLAYERS ON SI(111) - A SYSTEMATIC STUDY WITH HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY AND LOW-ENERGY ELECTRON-DIFFRACTION [J].
KELLY, MK ;
MARGARITONDO, G ;
ANDERSON, J ;
FRANKEL, DJ ;
LAPEYRE, GJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1396-1399
[8]   THE STRUCTURE OF THE INDIUM-SI(111) (ROOT-7X-ROOT-3) MONOLAYER SURFACE [J].
KRAFT, J ;
SURNEV, SL ;
NETZER, FP .
SURFACE SCIENCE, 1995, 340 (1-2) :36-48
[9]   Surface reconstructions of In on Si(111) [J].
Kraft, J ;
Ramsey, MG ;
Netzer, FP .
PHYSICAL REVIEW B, 1997, 55 (08) :5384-5393
[10]   SURFACE REACTIONS OF SILICON (3) WITH ALUMINUM AND INDIUM [J].
LANDER, JJ ;
MORRISON, J .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1706-&