THE STRUCTURE OF THE INDIUM-SI(111) (ROOT-7X-ROOT-3) MONOLAYER SURFACE

被引：81

作者：

KRAFT, J ^{[1
]}

SURNEV, SL ^{[1
]}

NETZER, FP ^{[1
]}

机构：

[1] KARL FRANZENS UNIV GRAZ,INST EXPTL PHYS,A-8010 GRAZ,AUSTRIA

来源：

SURFACE SCIENCE | 1995年 / 340卷 / 1-2期

关键词：

EPITAXY; INDIUM; LOW ENERGY ELECTRON DIFFRACTION (LEED); METAL-SEMICONDUCTOR INTERFACES; SCANNING TUNNELING MICROSCOPY; SCANNING TUNNELING SPECTROSCOPIES; SILICON; SURFACE STRUCTURE; MORPHOLOGY; ROUGHNESS; AND TOPOGRAPHY;

D O I：

10.1016/0039-6028(95)00516-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The structure of the ordered indium overlayer which forms at around one monolayer (ML) coverage at elevated temperature on Si(111)7 x 7 surfaces has been investigated by scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS) and low energy electron diffraction (LEED). The surface is characterised by a \2/1 -1/2\ unit cell, designated in the following as (root 7 x root 3), but two different local atomic configurations are observed to coexist at the same sample surface in atomically resolved STM images: a quasi-hexagonal arrangement with a local coverage of exactly 1 ML, and a quasi-rectangular arrangement with a local coverage of 1.2 ML. Both surface structures are metallic and reveal a very similar electronic structure in the STS spectra. The structures are discussed in terms of a close-packed In(001)-type overlayer and a strain-induced distortion of a pseudomorphic overlayer.

引用

页码：36 / 48

页数：13

共 16 条

[1] SI(111)-(4X1)IN SURFACE RECONSTRUCTION STUDIED BY IMPACT-COLLISION ION-SCATTERING SPECTROMETRY [J].

CORNELISON, DM ;

WORTHINGTON, MS ;

TSONG, IST .

PHYSICAL REVIEW B, 1991, 43 (05) :4051-4056

[2] THE GROWTH AND ATOMIC-STRUCTURE OF THE SI(111)-INDIUM INTERFACE STUDIED BY SURFACE X-RAY-DIFFRACTION [J].

FINNEY, MS ;

NORRIS, C ;

HOWES, PB ;

JAMES, MA ;

MACDONALD, JE ;

JOHNSON, AD ;

VLIEG, E .

PHYSICA B, 1994, 198 (1-3) :246-248

[3] CORRELATION BETWEEN ATOMIC-SCALE STRUCTURES AND MACROSCOPIC ELECTRICAL-PROPERTIES OF METAL-COVERED SI(111) SURFACES [J].

HASEGAWA, S ;

INO, S .

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1993, 7 (22) :3817-3876

[4] RECONSTRUCTION OF ALUMINUM AND INDIUM OVERLAYERS ON SI(111) - A SYSTEMATIC STUDY WITH HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY AND LOW-ENERGY ELECTRON-DIFFRACTION [J].

KELLY, MK ;

MARGARITONDO, G ;

ANDERSON, J ;

FRANKEL, DJ ;

LAPEYRE, GJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1396-1399

[5] ELECTRONIC-PROPERTIES OF ULTRATHIN NICKEL FILMS ON W(110) [J].

KOZIOL, C ;

LILIENKAMP, G ;

BAUER, E .

PHYSICAL REVIEW B, 1990, 41 (06) :3364-3371

[6]

KRAFT J, IN PRESS

[7] SURFACE REACTIONS OF SILICON (3) WITH ALUMINUM AND INDIUM [J].

LANDER, JJ ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1706-&

[8] STRUCTURE-ANALYSIS OF THE SINGLE-DOMAIN SI(111)4 X 1-IN SURFACE BY MU-PROBE AUGER-ELECTRON DIFFRACTION AND MU-PROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

NAKAMURA, N ;

ANNO, K ;

KONO, S .

SURFACE SCIENCE, 1991, 256 (1-2) :129-134

[9] INDIUM-INDUCED RECONSTRUCTIONS OF THE SI(111) SURFACE STUDIED BY SCANNING TUNNELING MICROSCOPY [J].

NOGAMI, J ;

PARK, SI ;

QUATE, CF .

PHYSICAL REVIEW B, 1987, 36 (11) :6221-6224

[10] BEHAVIOR OF INDIUM ON THE SI(111)7X7 SURFACE AT LOW-METAL COVERAGE [J].

NOGAMI, J ;

PARK, SI ;

QUATE, CF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1479-1482

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