Measurement of the bending strength of vapor-liquid-solid grown silicon nanowires

被引:207
作者
Hoffmann, S
Utke, I
Moser, B
Michler, J
Christiansen, SH
Schmidt, V
Senz, S
Werner, P
Gösele, U
Ballif, C
机构
[1] EMPA Mat Sci & Technol, CH-3602 Thun, Switzerland
[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[3] Univ Halle Wittenberg, D-06099 Halle, Germany
[4] Univ Neuchatel, Inst Microtechnol, CH-2000 Neuchatel, Switzerland
关键词
D O I
10.1021/nl052223z
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The fracture strength of silicon nanowires grown on a [111] silicon substrate by the vapor-liquid-solid process was measured. The nanowires, with diameters between 100 and 200 nm and a typical length of 2 mu m, were subjected to bending tests using an atomic force microscopy setup inside a scanning electron microscope. The average strength calculated from the maximum nanowire deflection before fracture was around 12 GPa, which is 6% of the Young's modulus of silicon along the nanowire direction. This value is close to the theoretical fracture strength, which indicates that surface or volume defects, if present, play only a minor role in fracture initiation.
引用
收藏
页码:622 / 625
页数:4
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