Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation

被引：13

作者：

Ghislotti, G

Nielsen, B

AsokaKumar, P

Lynn, KG

DiMauro, LF

Comi, F

Tonini, R

机构：

[1] BROOKHAVEN NATL LAB, DEPT APPL PHYS, UPTON, NY 11973 USA

[2] BROOKHAVEN NATL LAB, DEPT PHYS, UPTON, NY 11973 USA

[3] BROOKHAVEN NATL LAB, DEPT CHEM, UPTON, NY 11973 USA

[4] UNIV MODENA, DIPARTIMENTO FIS, I-41100 MODENA, ITALY

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 04期

关键词：

D O I：

10.1063/1.118315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Positron annihilation spectroscopy (PAS) is used to study Si-rich SiO2 samples prepared by implantation of Si (160 keV) ions at doses in the range 3 x 10(16)-3 x 10(17) cm(-2) and subsequent thermal annealing at high temperature (up to 1100 degrees C). Samples implanted at doses higher than 5 x 10(16) cm(-2) and annealed above 1000 degrees C showed a PAS spectrum with an annihilation peak broader than the unimplanted sample. We discuss how these results are related to the process of silicon precipitation inside SiO2. (C) 1997 American Institute of Physics.

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页码：496 / 498

页数：3

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