2.5-THz GaAs monolithic membrane-diode mixer

被引:150
作者
Siegel, PH [1 ]
Smith, RP [1 ]
Gaidis, MC [1 ]
Martin, SC [1 ]
机构
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
基金
美国国家航空航天局;
关键词
FIR; GaAs; membrane; micromachined; planar; radiometer; Schottky diode mixer; THz; waveguide;
D O I
10.1109/22.763161
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel GaAs monolithic membrane-diode (MOMED) structure has been developed and implemented as a 2.5-THz Schottky diode mixer, The mixer blends conventional machined metallic waveguide with micromachined monolithic GaAs circuitry to form, for the first time, a robust, easily fabricated, and assembled room-temperature planar diode receiver at frequencies above 2 THz, Measurements of receiver performance, in air, yield a T-receiver of 16 500-K double sideband (DSB) at 8.4-GHz intermediate frequency (IF) using a 150-K commercial Miteq amplifier. The receiver conversion loss (diplexer through IF amplifier input) measures 16.9 dB in air, yielding a derived "front-end" noise temperature below 9000-K DSB at 2514 GHz, Using a CO2-pumped methanol far-infrared laser as a local oscillator at 2522 GHz, injected via a Martin-Puplett diplexer, the required power is approximate to 5 mW for optimum pumping and can be reduced to less than 3 mW with a 15% increase in receiver noise, Although demonstrated as a simple submillimeter-wave mixer, the all-GaAs membrane structure that has been developed is suited to a wide variety of low-loss high-frequency radio-frequency circuits.
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页码:596 / 604
页数:9
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