Infrared radiation from hot holes during spatial transport in selectively doped InGaAs/GaAs heterostructures with quantum wells

被引：10

作者：

Aleshkin, VY ^{[1
]}

Andronov, AA ^{[1
]}

Antonov, AV ^{[1
]}

Bekin, NA ^{[1
]}

Gavrilenko, VI ^{[1
]}

Revin, DG ^{[1
]}

Zvonkov, BN ^{[1
]}

Linkova, ER ^{[1
]}

Malkina, IG ^{[1
]}

Uskova, EA ^{[1
]}

机构：

[1] NIZHEGOROD UNIV,INST PHYSICOTECH,NIZHNII NOVGOROD 603600,RUSSIA

来源：

JETP LETTERS | 1996年 / 64卷 / 07期

关键词：

D O I：

10.1134/1.567228

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The infrared radiation from hot holes in InxGa1-xAs/GaAs heterostructures with strained quantum wells during lateral transport is investigated experimentally. It is found that the infrared radiation intensities are nonmonotonic functions of the electric field. This behavior is due to the escape of hot holes from quantum wells in the GaAs barrier layers. A new mechanism for producing a population inversion in these structures is proposed. (C) 1996 American Institute of Physics.

引用

页码：520 / 524

页数：5

共 10 条

[1]

Aleshkin V. Ya., 1995, Lithuanian Physics Journal, V35, P368

[2] DEMONSTRATION OF A NEW OSCILLATOR BASED ON REAL-SPACE TRANSFER IN HETEROJUNCTIONS [J].

COLEMAN, PD ;

FREEMAN, J ;

MORKOC, H ;

HESS, K ;

STREETMAN, B ;

KEEVER, M .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :493-495

[3] FAR INFRARED-EMISSION FROM 2D-ELECTRONS AT THE GAAS-ALXGA1-XAS INTERFACE [J].

GORNIK, E ;

SCHAWARZ, R ;

TSUI, DC ;

GOSSARD, AC ;

WIEGMANN, W .

SOLID STATE COMMUNICATIONS, 1981, 38 (06) :541-545

[4] NONLOCAL AND NONLINEAR TRANSPORT IN SEMICONDUCTORS - REAL-SPACE TRANSFER EFFECTS [J].

GRIBNIKOV, ZS ;

HESS, K ;

KOSINOVSKY, GA .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) :1337-1373

[5]

IVANOV YL, 1995, INT S NAN PHYS TECHN, P225

[6]

LAESHKIN VY, 1995, INT S NAN PHYS TECHN, P443

[7] QUANTUM-WELL INFRARED PHOTODETECTORS [J].

LEVINE, BF .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) :R1-R81

[8] HIGH-FIELD HOLE TRANSPORT IN STRAINED INXGA1-XAS/GAAS MODULATION-DOPED QUANTUM-WELLS [J].

REDDY, M ;

GREY, R ;

CLAXTON, PA ;

WOODHEAD, J .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (06) :628-630

[9]

SITORI C, 1995, APPL PHYS LETT, V66, P3242

[10]

VOROBEV LE, 1995, SEMICONDUCTORS+, V29, P924

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