Preparation and characterization of Sb2S3 thin films using a successive ionic layer adsorption and reaction (SILAR) method

被引：60

作者：

Sankapal, BR ^{[1
]}

Mane, RS ^{[1
]}

Lokhande, CD ^{[1
]}

机构：

[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1999年 / 18卷 / 18期

关键词：

D O I：

10.1023/A:1006613510968

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple and new successive ionic layer adsorption and reaction (SILAR) method for obtaining good quality thin films of antimony trisulphide is presented. XRD studies show that the films are amorphous or consist of fine grains. The optical bandgap is found to be 1.8eV. The room temperature resistivity is of the order of 107 Ω-cm.

引用

页码：1453 / 1455

页数：3

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