Epitaxial growth of pentacene films on metal surfaces

被引：90

作者：

Lukas, S ^{[1
]}

Söhnchen, S ^{[1
]}

Witte, G ^{[1
]}

Wöll, C ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Lehrstuhl Phys Chem 1, D-44780 Bochum, Germany

来源：

CHEMPHYSCHEM | 2004年 / 5卷 / 02期

关键词：

crystal growth; field effect transistors; molecular beam epitaxy; pentacenes; thin films; X-ray absorption spectroscopy;

D O I：

10.1002/cphc.200300892

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The right temperature for growth: High quality, epitaxial pentacene thin films were grown on Cu(110) by applying a two-step growth procedure, which involves the formation (using organic molecular beam epitaxy) of a complete monolayer at elevated temperatures followed by multilayer deposition at reduced temperatures. The organic films prepared (see picture) using this approach have their molecular axes orientated perpendicular to the substrate surface and are promising for the fabrication of lateral field effect transistors (FETs).

引用

页码：266 / 270

页数：5

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