Nanolithography based on patterned metal transfer and its application to organic electronic devices

被引:106
作者
Kim, C [1 ]
Shtein, M [1 ]
Forrest, SR [1 ]
机构
[1] Princeton Univ, Dept Elect Engn, Ctr Photon & Optoelect Mat, Princeton, NJ 08544 USA
关键词
D O I
10.1063/1.1481980
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate a patterning method capable of producing features of submicron scale based on the transfer of a metal film from a stamp to a substrate assisted by cold welding. The patterned metal film can be used as an etch mask to replicate the pattern on the substrate, or the film itself can serve as contact electrodes for a wide range of electronic devices. We demonstrate the versatility of the technique by fabricating a polymer grating on SiO2 with lateral dimensions <80 nm and a pattern resolution approaching 10 nm, and by fabricating organic solar cells and pentacene channel organic thin-film transistors with channel lengths as short as 1 μm. (C) 2002 American Institute of Physics.
引用
收藏
页码:4051 / 4053
页数:3
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