RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

被引：67

作者：

Ding, SJ ^{[1
]}

Hu, H

Zhu, CX

Kim, SJ

Yu, XF

Li, MF

Cho, BJ

Chan, DSH

Yu, MB

Rustagi, SC

Chin, A

Kwong, DL

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

[2] Inst Microelect, Singapore 117685, Singapore

[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30050, Taiwan

[4] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78712 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 06期

关键词：

atomic layer-deposit (ALD); HfO2-Al2O3; laminate; metal-insulator-metal (MIM) capacitor; radio frequency (RF); reliability;

D O I：

10.1109/TED.2004.827367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance metal-insulator-metal capacitors using atomic layer-deposited HfO2-Al2O3 laminate are fabricated and characterized for RF and mixed-signal applications. The laminate capacitor can offer high capacitance density (12.8 fF/mum(2)) up to 20 GHz, low leakage current of 4.9 x 10(-8) A/cm(2) at 2 V and 125 degreesC, and small linear voltage coefficient of capacitance of 211 ppm/V at 1 MHz, which can easily satisfy RF capacitor requirements for year 2007 according to the International Technology Roadmap for Semiconductors. In addition, effects of constant voltage stress and temperature on leakage current and voltage linearity are comprehensively investigated, and dependences of quadratic voltage coefficient of capacitance (alpha) on frequency and thickness are also demonstrated. Meanwhile, the underlying mechanisms are also discussed.

引用

页码：886 / 894

页数：9

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