Ion beam induced luminescence maps in CVD diamond as obtained by coincidence measurements

被引:14
作者
Manfredotti, C
Fizzotti, F
Lo Giudice, A
Polesello, P
Vittone, E
Truccato, M
Rossi, P
机构
[1] Univ Turin, Expt Phys Dept, I-10125 Turin, Italy
[2] Univ Padua, Dept Phys, Padua, Italy
关键词
coincidence measurements; CVD diamond; ion beam induced luminescence; maps;
D O I
10.1016/S0925-9635(99)00051-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A new theory is presented concerning both IBIC (ion beam induced charge) and IBIL (ion beam induced luminescence) as obtained by a few MeV ion microbeam of a few micrometers spot size. The theory evidences the fact that IBIL depends on the ratio between the total carrier lifetime and the radiative recombination lifetime. The IBIL/IBIC maps, as obtained by dividing the two average signals pixel by pixel, depend only on radiative lifetime. IBIL maps, as obtained by coincidence measurements in order to avoid electric noise and display regions of low luminescence, compared with IBIC maps, indicate for the first time that regions of long collection length and regions of strong radiative recombination are the most important in CVD diamond. In conclusion, recombination in CVD diamond seems to be mainly radiative. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:1592 / 1596
页数:5
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