Photoluminescence of CdSe quantum dots and rods from buffer-layer-assisted growth

被引:7
作者
Antonov, VN [1 ]
Swaminathan, P [1 ]
Soares, JANT [1 ]
Palmer, JS [1 ]
Weaver, JH [1 ]
机构
[1] Univ Illinois, Dept Phys, Dept Mat Sci & Engn, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
关键词
D O I
10.1063/1.2187411
中图分类号
O59 [应用物理学];
学科分类号
摘要
The traditional colloidal routes of fabrication of II-VI semiconductor quantum dots have been difficult to integrate with silicon technology. Here, we demonstrate that CdSe quantum dots and rods can be self-assembled and delivered in ultrahigh vacuum conditions on almost any substrate by means of buffer-layer-assisted growth (BLAG), where the buffer is thin solid Xe film. We determine the diffusivity of the particles on the buffer, and demonstrate the significance of the ionicity of the CdSe. Photoluminescence spectra are compared to the previous studies of colloidal CdSe structures. This study opens the door for the synthesis of tunable II-VI heterostructures.
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页数:3
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