Swift-heavy-ion induced damage in germanium: An evaluation of defect introduction rates

N-type lightly doped germanium samples were irradiated at 300 K with swift heavy ions at the Grand Accelerateur National d'Ions Lourds. Induced damage was studied from in situ conductivity and Hall mobility measurements. By using previously reported deep-level-transient-spectroscopy results, simulations of experimental curves were performed. The introduction rates of the different induced defects are extracted from these simulations and analyzed in terms of the nuclear and electronic stopping powers of the ions. A partial annealing of the divacancies appears for the highest values of the electronic stopping power. (C) 1996 American Institute of Physics.