Continuous charge restoration in semiconductor detectors by means of the gate-to-drain current of the integrated front-end JFET

被引：39

作者：

Fiorini, C ^{[1
]}

Lechner, P

机构：

[1] Politecn Milan, Dipartimento Elettr & Informaz, I-20133 Milan, Italy

[2] KETEK GmbH, D-85764 Oberschleissheim, Germany

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1999年 / 46卷 / 03期

关键词：

JFET's; silicon radiation detectors;

D O I：

10.1109/23.774174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A continuous reset method for discharging the leakage current and the signal charge in semiconductor radiation detectors with on-chip electronics has been studied and experimentally verified. The charge collected at the output electrode of the detector is discharged by means of the gate-to-drain current of the front-end JFET integrated in the detector itself. The suitable value of gate current is reached by means of a "weak" avalanche breakdown mechanism which occurs in a high-field region of the transistor channel. When the JFET is operated in a source follower configuration, this mechanism is self-adapting to new values of leakage or signal currents.

引用

页码：761 / 764

页数：4

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