Charge-sensitive amplifier front-end with an nJFET and a forward-biased reset diode

被引：9

作者：

Fazzi, A

Jalas, P

Rehak, P

Holl, P

机构：

[1] UNIV HELSINKI,SEFT,ESPOO 02151,FINLAND

[2] BROOKHAVEN NATL LAB,UPTON,NY 11973

[3] MAX PLANCK INST,GARCHING,GERMANY

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 06期

关键词：

D O I：

10.1109/23.552721

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new configuration of a resistorless charge sensitive preamplifier with an nJFET as an input device was tested, The de level of the input of the amplifier was kept constant by a slightly forward-biased np junction connected between the input of the amplifier and ground, A noise level of 22 root mean square (r.m.s,) electrons is measured at 295 K and 15 r,m,s, electrons at 253 K. The dynamic behavior of the amplifier is investigated with different leakage current conditions. The technological benefits and the suitability of the front-end connection for room temperature detectors, particularly multianode drift chambers, are highlighted.

引用

收藏

页码：3218 / 3222

页数：5

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