Strong 1.54 mu m luminescence from erbium-doped porous silicon

被引：25

作者：

Dorofeev, A ^{[1
]}

Bachilo, E ^{[1
]}

Bondarenko, V ^{[1
]}

Gaponenko, N ^{[1
]}

Kazuchits, N ^{[1
]}

Leshok, A ^{[1
]}

Troyanova, G ^{[1
]}

Vorozov, N ^{[1
]}

Borisenko, V ^{[1
]}

Gnaser, H ^{[1
]}

Bock, W ^{[1
]}

Becker, P ^{[1
]}

Oechsner, H ^{[1
]}

机构：

[1] UNIV KAISERSLAUTERN, INST OBERFLACHEN & SCHICHANALYT, D-67663 KAISERSLAUTERN, GERMANY

来源：

THIN SOLID FILMS | 1996年 / 276卷 / 1-2期

基金：

以色列科学基金会;

关键词：

luminescence; erbium; deposition process; electrochemistry;

D O I：

10.1016/0040-6090(95)08082-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Porous silicon doped by erbium electrodeposition or from spin-on silica gel film followed by rapid thermal processing at 950 degrees C or higher exhibited liquid-nitrogen and room-temperature luminescence at 1.54 mu m. The full width at half maximum was about 0.01 eV at 77 K. The mechanism of light emission from erbium-doped porous silicon is proposed. The direct bandgap of nanocrystallites in porous silicon is considered to provide an effective pumping media.

引用

页码：171 / 174

页数：4

共 29 条

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