PROGRESS TOWARD CRYSTALLINE-SILICON-BASED LIGHT-EMITTING-DIODES

被引:57
作者
CANHAM, L
机构
关键词
D O I
10.1557/S0883769400037490
中图分类号
T [工业技术];
学科分类号
08 ;
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[No abstract available]
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页码:22 / 28
页数:7
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  • [1] LOCAL-STRUCTURE OF 1.54-MU-M-LUMINESCENCE ER-3+ IMPLANTED IN SI
    ADLER, DL
    JACOBSON, DC
    EAGLESHAM, DJ
    MARCUS, MA
    BENTON, JL
    POATE, JM
    CITRIN, PH
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (18) : 2181 - 2183
  • [2] BASSOUS E, 1992, LIGHT EMISSION SILIC, V256, P23
  • [3] BRADFIELD PL, 1989, APPL PHYS LETT, V51, P100
  • [4] VISIBLE-LIGHT EMISSION FROM A POROUS SILICON SOLUTION DIODE
    BRESSERS, PMMC
    KNAPEN, JWJ
    MEULENKAMP, EA
    KELLY, JJ
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (01) : 108 - 110
  • [5] CALCOTT PDJ, 1993, MAT RES S C, V283, P143
  • [6] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
    CANHAM, LT
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
  • [7] 1.3-MU-M LIGHT-EMITTING DIODE FROM SILICON ELECTRON-IRRADIATED AT ITS DAMAGE THRESHOLD
    CANHAM, LT
    BARRACLOUGH, KG
    ROBBINS, DJ
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (19) : 1509 - 1511
  • [8] EFFICIENT VISIBLE ELECTROLUMINESCENCE FROM HIGHLY POROUS SILICON UNDER CATHODIC BIAS
    CANHAM, LT
    LEONG, WY
    BEALE, MIJ
    COX, TI
    TAYLOR, L
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (21) : 2563 - 2565
  • [9] CANHAM LT, 1991, Patent No. 9108176
  • [10] VISIBLE-LIGHT EMISSION FROM HEAVILY DOPED POROUS SILICON HOMOJUNCTION PN DIODES
    CHEN, ZL
    BOSMAN, G
    OCHOA, R
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (07) : 708 - 710