VISIBLE-LIGHT EMISSION FROM HEAVILY DOPED POROUS SILICON HOMOJUNCTION PN DIODES

被引：65

作者：

CHEN, ZL ^{[1
]}

BOSMAN, G ^{[1
]}

OCHOA, R ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.109603

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed visible light emission with a peak wavelength of 640 nm from forward biased, heavily doped porous silicon homojunction pn diodes. The light emission is attributed to electron-hole recombination across the direct band gap of the monocrystalline quantum wires which make up the porous silicon junction layers.

引用

收藏

页码：708 / 710

页数：3

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