APPLICATION OF POROUS SILICON FORMATION SELECTIVITY TO IMPURITY PROFILING IN P-TYPE SILICON SUBSTRATES

被引：15

作者：

LIGEON, M ^{[1
]}

MULLER, F ^{[1
]}

HERINO, R ^{[1
]}

GASPARD, F ^{[1
]}

HALIMAOUI, A ^{[1
]}

BOMCHIL, G ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.344044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3814 / 3819

页数：6

相关论文

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