SELECTIVE POROUS SILICON FORMATION IN BURIED P+ LAYERS

被引：20

作者：

TSAO, SS ^{[1
]}

MYERS, DR ^{[1
]}

GUILINGER, TR ^{[1
]}

KELLY, MJ ^{[1
]}

DATYE, AK ^{[1
]}

机构：

[1] UNIV NEW MEXICO,DEPT CHEM & NUCL ENGN,ALBUQUERQUE,NM 87131

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 10期

关键词：

D O I：

10.1063/1.339086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4182 / 4186

页数：5

共 12 条

[1] STRESS IN OXIDIZED POROUS SILICON LAYERS
BARLA, K
HERINO, R
BOMCHIL, G
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 439 - 441
[2] Barla K., 1986, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 85, P53
[3] A STUDY OF SILICON MBE ON POROUS SILICON SUBSTRATES
BEALE, MIJ
CHEW, NG
CULLIS, AG
GASSON, DB
HARDEMAN, RW
ROBBINS, DJ
YOUNG, IM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 732 - 735
[4] AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON
BEALE, MIJ
BENJAMIN, JD
UREN, MJ
CHEW, NG
CULLIS, AG
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) : 622 - 636
[5] LARGE AREA, UNIFORM SILICON-ON-INSULATOR USING A BURIED LAYER OF OXIDIZED POROUS SILICON
BENJAMIN, JD
KEEN, JM
CULLIS, AG
INNES, B
CHEW, NG
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (12) : 716 - 718
[6] CRYSTALLINE QUALITY OF SILICON LAYER FORMED BY FIPOS TECHNOLOGY
IMAI, K
UNNO, H
TAKAOKA, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) : 547 - 553
[7] A NEW SILICON-ON-INSULATOR STRUCTURE USING A SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH ON POROUS SILICON
KONAKA, S
TABE, M
SAKAI, T
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 86 - 88
[8] 100-MUM-WIDE SILICON-ON-INSULATOR STRUCTURES BY SI MOLECULAR-BEAM EPITAXY GROWTH ON POROUS SILICON
LIN, TL
CHEN, SC
KAO, YC
WANG, KL
IYER, S
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (26) : 1793 - 1795
[9] Nesbit L. A., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P800
[10] TENHUNEN HA, 1986, THESIS CORNELL U

← 1 2 →