CRYSTALLINE QUALITY OF SILICON LAYER FORMED BY FIPOS TECHNOLOGY

被引：15

作者：

IMAI, K

UNNO, H

TAKAOKA, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 63卷 / 03期

关键词：

D O I：

10.1016/0022-0248(83)90166-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：547 / 553

页数：7

共 14 条

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