CONVERSION OF THE CONDUCTIVITY MODE IN SILICON BY OXYGEN ION-IMPLANTATION AND ITS APPLICATION IN A NOVEL DIELECTRIC ISOLATION TECHNIQUE

被引：6

作者：

CHI, JY ^{[1
]}

HOLMSTROM, RP ^{[1
]}

MAO, BY ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 05期

关键词：

D O I：

10.1063/1.93125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：420 / 422

页数：3

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