100-MUM-WIDE SILICON-ON-INSULATOR STRUCTURES BY SI MOLECULAR-BEAM EPITAXY GROWTH ON POROUS SILICON

被引：17

作者：

LIN, TL ^{[1
]}

CHEN, SC ^{[1
]}

KAO, YC ^{[1
]}

WANG, KL ^{[1
]}

IYER, S ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 26期

关键词：

D O I：

10.1063/1.96789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1793 / 1795

页数：3

相关论文

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