Minimization of sub-oxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing

被引：8

作者：

Lucovsky, G

Banerjee, A

Hinds, B

Claflin, B

Koh, K

Yang, H

机构：

[1] Depts. Phys., Mat. Sci. Eng., E., NC State University, Raleigh

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 36卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0167-9317(97)00049-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Combining previously reported optical second harmonic generation (SHG) data with i) newly-reported X-ray photoelectron spectroscopy (XPS) data and ii) the Auger electron spectroscopy (AES) results presented in this paper demonstrates that interfacial sub-oxide bonding (SiO(x), x<2) invariably results from rapid thermal or plasma-assisted oxidation at temperatures below 800 degrees C, and is significantly reduced following a 30s, 900 degrees C RTA.

引用

页码：207 / 210

页数：4

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