LOW-TEMPERATURE PREPARATION OF SIO2/SI(100) INTERFACES USING A 2-STEP REMOTE PLASMA-ASSISTED OXIDATION-DEPOSITION PROCESS

SiO2/Si(100) interfaces have been prepared by a low-temperature, 200-300-degrees-C, remote plasma-assisted oxidation-deposition process. The oxidation: (i) creates approximately 0.5 nm of SiO2; (ii) removes residual C from an otherwise H-terminated Si surface; and (iii) produces a SiO2/Si interface with a midgap trap density of approximately 1 x 10(10) cm-2 eV-1, and when combined with remote plasma-enhanced chemical vapor deposition (RPECVD) of SiO2, (iv) forms a SiO2/Si structure with properties comparable to those prepared by thermal oxidation of Si at 850-1050-degrees-C.