Integrated platform for silicon photonic crystal devices at near-infrared wavelengths

被引：11

作者：

Chen, L ^{[1
]}

Suzuki, Y

Kohnke, GE

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[2] Corning Inc, Corning, NY 14831 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 09期

关键词：

D O I：

10.1063/1.1457525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate an integrated fiber-photonic crystal system with a uniform band gap of around 1550 nm with insertion loss as low as 3.5 dB. One-dimensional photonic crystals fabricated on this platform exhibit a higher-order photonic band gap with over 30 dB suppression of transmission from 1400 to 1700 nm that is consistent with simulation. These results may lead to true integration of photonic crystals into optical fiber communication systems as optical switches and routers. (C) 2002 American Institute of Physics.

引用

页码：1514 / 1516

页数：3

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