Fabrication of submicrometre 3D periodic structures composed of Si/SiO2

被引:108
作者
Kawakami, S
机构
[1] Res. Inst. of Elec. Communication, Tohoku University, Sendai-shi, Miyagi-ken, 980-77
关键词
silicon dioxide; sputter etching;
D O I
10.1049/el:19970844
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The successful fabrication of 3D periodic structures composed of two transparent materials in the submicrometre range is reported for the first time. The material system comprises a-Si (n = 3.26) and SiO2 (n = 1.46), and sputter-etching leads to 'high-fidelity' layer-to-layer propagation of a concave-convex pattern.
引用
收藏
页码:1260 / 1261
页数:2
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