Interfacial hardness enhancement in deuterium annealed 0.25 mu m channel metal oxide semiconductor transistors

Interfacial degradation induced by hot-electron injection has been studied in n-channel metal oxide semiconductor transistors with channel lengths down to 0.2 mu m. The devices were annealed in either H-2 of D-2 containing atmospheres. The channel transconductance and threshold voltage variations. induced by hot-electron injection into the gate are consistent with interface state generation. Charge pumping experiments confirm this conclusion. The lifetime for a 10% reduction in the transconductance is enhanced by similar to 10 times for devices annealed in D-2 containing atmospheres as compared to those annealed in H-2. (C) 1997 American Institute of Physics.