175 K continuous wave operation of InAsSb/InAIAsSb quantum-well diode lasers emitting at 3.5 mu m

被引：97

作者：

Choi, HK

Turner, GW

Manfra, MJ

Connors, MK

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 21期

关键词：

D O I：

10.1063/1.116360

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multiple quantum-well diode lasers incorporating compressively strained InAS(0.935)Sb(0.065) wells and tensile-strained In0.15Al0.85As0.9Sb0.1 barriers are reported. These lasers, grown on InAs substrates by molecular beam epitaxy, have emission wavelengths between 3.2 and 3.55 mu m. Broad-stripe lasers have exhibited pulsed threshold current density as low as 30 A/cm(2) at 80 K and the characteristic temperatures between 30 and 40 K. The maximum pulsed operating temperature is 225 K. Ridge-waveguide lasers have cw threshold current of 12 mA at 100 K, and the maximum cw operating temperature is 175 K. (C) 1996 American Institute of Physics.

引用

页码：2936 / 2938

页数：3