Direct observation of atomic scale surface relaxation in ortho twin structures in GaAs by XSTM

被引：9

作者：

Bolinsson, J. ^{[1
]}

Ouattara, L. ^{[1
]}

Hofer, W. A. ^{[2
]}

Skold, N. ^{[1
]}

Lundgren, E. ^{[1
]}

Gustafsson, A. ^{[1
]}

Mikkelsen, A. ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

[2] Univ Liverpool, Liverpool L69 3BX, Merseyside, England

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2009年 / 21卷 / 05期

基金：

瑞典研究理事会;

关键词：

SCANNING-TUNNELING-MICROSCOPY; COMPOUND SEMICONDUCTORS; NANOWIRES; GROWTH; GAAS(110); SUPERLATTICES;

D O I：

10.1088/0953-8984/21/5/055404

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied the (110) GaAs surface of a structure containing ortho twins by cross-sectional scanning tunnelling microscopy and we have compared the experimental results with ab initio density functional theory calculations and STM simulations. Both experimentally and theoretically we find that the surface of different twin crystallites are significantly displaced with respect to each other, parallel to the twin boundary. This result is explained by a surface relaxation of the atoms in the (110) GaAs surface and the difference between the atomic configuration of the ortho twins.

引用

页数：7

共 34 条

[1] An empirical potential approach to wurtzite-zinc-blende polytypism in group III-V semiconductor nanowires [J].