SURFACE-MORPHOLOGY OF GAAS(110) BY SCANNING TUNNELING MICROSCOPY

被引：85

作者：

FEENSTRA, RM

FEIN, AP

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.32.1394

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1394 / 1396

页数：3

共 7 条

[1] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J].

BINNIG, G ;

ROHRER, H ;

GERBER, C ;

WEIBEL, E .

PHYSICAL REVIEW LETTERS, 1983, 50 (02) :120-123

[2] SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J].

BINNING, G ;

ROHRER, H ;

GERBER, C ;

WEIBEL, E .

PHYSICAL REVIEW LETTERS, 1982, 49 (01) :57-61

[3]

FEENSTRA RM, UNPUB APPL PHYS LETT

[4] SEMICONDUCTOR SURFACE RECONSTRUCTION - RIPPLED GEOMETRY OF GAAS(110) [J].

LUBINSKY, AR ;

DUKE, CB ;

LEE, BW ;

MARK, P .

PHYSICAL REVIEW LETTERS, 1976, 36 (17) :1058-1061

[5]

MEYER RJ, 1979, PHYS REV B, V19, P5195

[6] THEORY OF THE SCANNING TUNNELING MICROSCOPE [J].

TERSOFF, J ;

HAMANN, DR .

PHYSICAL REVIEW B, 1985, 31 (02) :805-813

[7] THE GEOMETRIC STRUCTURES OF THE GAAS(111) AND (110) SURFACES [J].

TONG, SY ;

MEI, WN ;

XU, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :393-398

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