Optical properties of Si-Ge semiconductor nano-onions

被引：25

作者：

Hill, NA ^{[1
]}

Pokrant, S

Hill, AJ

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Bonn, Inst Phys Chem, D-53115 Bonn, Germany

[3] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 1999年 / 103卷 / 16期

关键词：

D O I：

10.1021/jp990188c

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We explore theoretically the possibility of obtaining efficient light emission from Si-Ge semiconductor nano-onions. Our motivation stems from the strong luminescence recently observed from II-VI nano-onions, combined with the technological significance of the Si-Ge system. We calculate the electronic properties of a range of hypothetical Si-Ge nano-onions using the tight-binding method and determine the combination of. size,; strain, and materials which optimizes the production of visible luminescence. We predict that small (less than around 30 Angstrom diameter) Si-covered Ge nano-onions will be visible light emitters.

引用

页码：3156 / 3161

页数：6

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