Spectral dependencies of terahertz emission from InAs and InSb

被引：48

作者：

Adomavicius, R

Molis, G

Krotkus, A

Sirutkaitis, V

机构：

[1] Lithuania Acad Sci, Inst Semicond Phys, LT-01108 Vilnius, Lithuania

[2] Vilnius Univ, Laser Res Ctr, Vilnius, Lithuania

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 26期

关键词：

D O I：

10.1063/1.2143111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spectral dependences of the THz radiation from the laser-illuminated surfaces of InAs and InSb have been investigated experimentally at high optical fluences for the laser wavelengths ranging from 0.6 to 2 mu m. Efficient THz generation was discovered in the excitation range around 1.6 mu m. The influence of the intervalley scattering was clearly evidenced. The energy position of the subsidiary conduction band valleys was evaluated from this study to be equal 1.08 and 0.53 eV for InAs and InSb, respectively. It has been concluded that THz emission at high excitation fluencies is dominated by the shift current effect. (c) 2005 American Institute of Physics.

引用

收藏

页码：1 / 3

页数：3

相关论文

共 14 条

[1] Terahertz emission from p-InAs due to the instantaneous polarization [J].

Adomavicius, R ;

Urbanowicz, A ;

Molis, G ;

Krotkus, A ;

Satkovskis, E .

APPLIED PHYSICS LETTERS, 2004, 85 (13) :2463-2465

[2]

Coté D, 2002, APPL PHYS LETT, V80, P905, DOI 10.1063/1.1436530

[3] THz electromagnetic emission by coherent infrared-active phonons [J].

Dekorsy, T ;

Auer, H ;

Bakker, HJ ;

Roskos, HG ;

Kurz, H .

PHYSICAL REVIEW B, 1996, 53 (07) :4005-4014

[4] Study of terahertz radiation from InAs and InSb [J].

Gu, P ;

Tani, M ;

Kono, S ;

Sakai, K ;

Zhang, XC .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (09) :5533-5537

[5] Emission of terahertz radiation from coupled plasmon-phonon modes in InAs [J].

Hasselbeck, MP ;

Stalnaker, D ;

Schlie, LA ;

Rotter, TJ ;

Stintz, A ;

Sheik-Bahae, M .

PHYSICAL REVIEW B, 2002, 65 (23) :2332031-2332034

[6] Terahertz emission from GaAs and InAs in a magnetic field -: art. no. 085202 [J].

Heyman, JN ;

Neocleous, P ;

Hebert, D ;

Crowell, PA ;

Müller, T ;

Unterrainer, K .

PHYSICAL REVIEW B, 2001, 64 (08) :852021-852027

[7] INFRARED WAVELENGTH AND TEMPERATURE-DEPENDENCE OF OPTICALLY INDUCED TERAHERTZ RADIATION FROM INSB [J].

HOWELLS, SC ;

HERRERA, SD ;

SCHLIE, LA .

APPLIED PHYSICS LETTERS, 1994, 65 (23) :2946-2948

[8]

Krotkus A., 1988, ELECT CONDUCTIVITY N

[9] Terahertz emission from (100)InAs surfaces at high excitation fluences [J].

Reid, M ;

Fedosejevs, R .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :011906-1

[10] TERAHERTZ OPTICAL RECTIFICATION FROM (110) ZINCBLENDE CRYSTALS [J].

RICE, A ;

JIN, Y ;

MA, XF ;

ZHANG, XC ;

BLISS, D ;

LARKIN, J ;

ALEXANDER, M .

APPLIED PHYSICS LETTERS, 1994, 64 (11) :1324-1326