Terahertz emission from (100)InAs surfaces at high excitation fluences

被引：67

作者：

Reid, M ^{[1
]}

Fedosejevs, R ^{[1
]}

机构：

[1] Univ Alberta, Dept Elect Engn, Edmonton, AB T6G 2V4, Canada

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 01期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1063/1.1842863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The radiated terahertz field from (100) InAs surfaces under excitation at fluences of millijoules per centimeter squared has been studied in detail in order to identify the main generation mechanism. We find that the terahertz emission depends strongly on pump polarization, and that the predominant emission mechanism appears to be the surface nonlinear optical response of the InAs crystal. A saturation fluence of 29+/-4 muJ/cm(2) is found for the emission. (C) 2005 American Institute of Physics.

引用

页码：011906 / 1

页数：3

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