Dense arrays of nanopores as x-ray lithography masks

被引：9

作者：

Knaack, SA ^{[1
]}

Eddington, J

Leonard, Q

Cerrina, F

Onellion, M

机构：

[1] Univ Wisconsin, Ctr Nanotechnol, Dept Phys, Madison, WI 53706 USA

[2] Univ Wisconsin, Ctr Nanotechnol, Dept Elect & Comp Engn, Madison, WI 53706 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 17期

关键词：

D O I：

10.1063/1.1705724

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An anodized aluminum oxide nanopore has been used as an x-ray lithography mask to achieve a feature size of similar to35 nm on the polymethylmethacrylate photoresist. The mask was exposed using synchrotron radiation and demonstrates the feasibility of forming large arrays of regular nanostructures. (C) 2004 American Institute of Physics.

引用

页码：3388 / 3390

页数：3

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