Variation of the confinement potential of a quasi-one-dimensional electron gas by lateral p-n junctions

被引：11

作者：

Evans, RJ ^{[1
]}

Burke, TM ^{[1
]}

Burroughes, JH ^{[1
]}

Grimshaw, MP ^{[1
]}

Ritchie, DA ^{[1
]}

Pepper, M ^{[1
]}

机构：

[1] TOSHIBA CAMBRIDGE RES CTR,CAMBRIDGE CB4 4WE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 12期

关键词：

D O I：

10.1063/1.115913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the first study of a new system where the confinement potential of a high mobility quasi-one-dimensional electron gas on the (100) GaAs surface is varied using two, two-dimensional hole gases produced on the adjacent (311)A surfaces. The structure consists of two lateral two-dimensional p-n junctions, placed back-to-bacb to form a p-n-p structure. The confinement potential of the narrow n-type channel can thus be modulated by applying a bias to the adjacent p-type regions. Magnetoresistance measurements of the narrow channel show magnetic depopulation of the one-dimensional subbands [K.-E Berggren, T. J. Thornton, D. J. Newson, and M. Pepper, Phys. Rev. Lett. 57, 1769 (1986)], following the model of Berggren et al. [Phys. Rev. B 37, 10118 (1988)] widths and one-dimensional carrier concentrations are extracted to fully characterize the dependence of the channel on the applied ''hole-gate'' voltage. (C) 1996 American Institute of Physics.

引用

页码：1708 / 1710

页数：3

共 8 条

[1] CHARACTERIZATION OF VERY NARROW QUASI-ONE-DIMENSIONAL QUANTUM CHANNELS [J].