Field emission properties of silicon carbide and diamond-like carbon (DLC) films made by chemical vapour deposition techniques

被引：22

作者：

Kleps, I

Nicolaescu, D

Stamatin, I

Correia, A

Gil, A

Zlatin, A

机构：

[1] Inst Microtechnol, Bucharest 72225, Romania

[2] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[3] Univ Bucharest, Fac Phys, Bucharest 76900, Romania

[4] CSIC, Lab Fis Sistemas Pequenos & Nanotecnol, E-28006 Madrid, Spain

[5] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain

来源：

APPLIED SURFACE SCIENCE | 1999年 / 146卷 / 1-4期

关键词：

field emission arrays (FEAs); amorphous silicon carbide (a-SiC); diamond-like carbon films;

D O I：

10.1016/S0169-4332(99)00005-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Chemical vapour-deposited (CVD) amorphous silicon carbide (a-SiC) and diamond-like cal bon (DLC) thin films were realised on p-type silicon field emitter arrays (FEAs) in order to investigate their field emission properties. The FEA geometry was investigated by scanning electron microscopy (SEM), the film morphology by scanning force microscopy (SFM) and by SEM?, and the film structure by X-ray photoelectron spectroscopy (XPS). Field emission properties of FEAs were determined in high vacuum conditions. a-SiC/p-Si in comparison with DLC/p-Si emitter arrays have higher current emission at lower external fields. The upper limits of the field emission current densities were 2.4 mA/cm(2) for an electric field of 25 V/mu m in the case of SiC and 0.8 mA/cm(2) for the electric field of 42 V/mu m in the case of DLC films. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：152 / 157

页数：6

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