Mechanism of charge generation in p-type doped layer in the connection unit of tandem-type organic light-emitting devices

被引：30

作者：

Gao, X. D. ^{[1
]}

Zhou, J. ^{[1
]}

Xie, Z. T. ^{[1
]}

Ding, B. F. ^{[1
]}

Qian, Y. C. ^{[1
]}

Ding, X. M. ^{[1
]}

Hou, X. Y. ^{[1
]}

机构：

[1] Fudan Univ, Natl Key Lab, Surface Phys Lab, Shanghai 200433, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 08期

关键词：

D O I：

10.1063/1.2969293

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A p-type doped organic layer combined with a hole-blocking layer has been experimentally demonstrated to serve as the charge generation unit in tandem-type organic light-emitting devices. The p-type layer functions as the source of both holes and electrons. Charge separation is explained by the tunneling model that the hole-blocking layer reduces the energy barrier for the electrons generated in the p-type layer to tunnel through into one light-emitting unit, while the holes generated in the p-type layer can transport to the other light-emitting unit easily under operation voltage. (c) 2008 American Institute of Physics.

引用

页数：3

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