Properties of ultra-thin lead zirconate titanate thin films prepared by ozone jet reactive evaporation

被引：22

作者：

Torii, K

Kawakami, H

Miki, H

Kushida, K

Fujisaki, Y

机构：

[1] Central Research Laboratory, Hitachi, Limited, Kokubunji, 185, Tokyo

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 06期

关键词：

D O I：

10.1063/1.363980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lead zirconate titanate (PZT) thin films were prepared by reactive coevaporation with high-concentration ozone. PZT thin films that demonstrate the highest charge storage density (280 fC/mu m(2) at 1.5 V for 75-nm-thick film) yet reported have been fabricated. No fatigue was observed after 10(11) polarization switching cycles even though a Pt electrode is used. A low leakage current of <10(-7) A/cm(2) at 1.5 V was attained. These PZT films are promising candidates of an alternative capacitor dielectric for dynamic random access memory (DRAM) and ferroelectric nonvolatile memories. (C) 1997 American Institute of Physics.

引用

页码：2755 / 2759

页数：5

共 18 条

[1] Effect of B-site cation stoichiometry on electrical fatigue of RuO2/Pb(ZrxTi1-x)O-3/RuO2 capacitors [J].

AlShareef, HN ;

Tuttle, BA ;

Warren, WL ;

Headley, TJ ;

Dimos, D ;

Voigt, JA ;

Nasby, RD .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (02) :1013-1016

[2]

Chen X., 1994, Integrated Ferroelectrics, V5, P59, DOI 10.1080/10584589408018680

[3]

Fujii E., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P267, DOI 10.1109/IEDM.1992.307357

[4]

FUJISAKI Y, UNPUB

[5]

Koyama K., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P823, DOI 10.1109/IEDM.1991.235298

[6] DIELECTRIC-PROPERTIES OF (BAXSR1-X)TIO3 THIN-FILMS PREPARED BY RF-SPUTTERING FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATION [J].

KUROIWA, T ;

TSUNEMINE, Y ;

HORIKAWA, T ;

MAKITA, T ;

TANIMURA, J ;

MIKAMI, N ;

SATO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5187-5191

[7] FERROELECTRIC PROPERTIES AND FATIGUE OF PBZR0.51TI0.49O3 THIN-FILMS OF VARYING THICKNESS - BLOCKING LAYER MODEL [J].

LARSEN, PK ;

DORMANS, GJM ;

TAYLOR, DJ ;

VANVELDHOVEN, PJ .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) :2405-2413

[8]

Lebedev N. I., 1994, Integrated Ferroelectrics, V4, P21, DOI 10.1080/10584589408018656

[9] CHARACTERISTIC CHANGE DUE TO POLARIZATION FATIGUE OF SOL-GEL FERROELECTRIC PB(ZR0.4TI0.6)O-3 THIN-FILM CAPACITORS [J].

MIHARA, T ;

WATANABE, H ;

DEARAUJO, CAP .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5281-5286

[10] PREPARATION OF PB(ZR,TI)O-3 THIN-FILMS ON IR AND IRO2 ELECTRODES [J].

NAKAMURA, T ;

NAKAO, Y ;

KAMISAWA, A ;

TAKASU, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5207-5210

← 1 2 →