Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate

被引：80

作者：

Kwak, JS ^{[1
]}

Lee, KY ^{[1
]}

Han, JY ^{[1
]}

Cho, J ^{[1
]}

Chae, S ^{[1
]}

Nam, OH ^{[1
]}

Park, Y ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Mat & Devices Lab, Suwon, South Korea

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 20期

关键词：

D O I：

10.1063/1.1419053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of crystal polarity on the electrical properties of Ti/Al contacts to n-GaN substrate has been investigated. The Ti/Al contacts prepared on Ga-face n-GaN substrate became ohmic with a contact resistivity of 2x10(-5) Omega cm(2) after annealing at temperatures higher than 600 degreesC for 30 s. On the contrary, the contacts on N-face n-GaN substrate exhibited nonlinear current-voltage curve and high Schottky barrier heights over 1 eV were measured at the same annealing conditions. These results could be explained by opposite piezoelectric-field at GaN/AlN heterostructure resulted from different polarity of the GaN substrate. (C) 2001 American Institute of Physics.

引用

页码：3254 / 3256

页数：3

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