Wavelength dependence of InGaN laser diode characteristics

被引：86

作者：

Nagahama, S ^{[1
]}

Yanamoto, T ^{[1
]}

Sano, M ^{[1
]}

Mukai, T ^{[1
]}

机构：

[1] Nichia Chem Ind Ltd, Nitride Semicond Res Lab, Tokushima 774, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 5A期

关键词：

InGaN; quantum well; blue laser; lateral overgrowth; GaN substrate; lifetime;

D O I：

10.1143/JJAP.40.3075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN multi-quantum-well-structure laser diodes (LDs) with an emission wavelength of longer than 420 nm were grown on both an epitaxially laterally overgrown GaN (ELOG) substrate and an ELOG on a free-standing GaN substrate by a metaorganic chemical vapor deposition method, The wavelength dependence of InGaN LD characteristics was investigated. It was found that there was a strong relationship between the threshold current density and the emission wavelength of LDs. The LDs with the emission wavelength of 450 nm grown on the ELOG on a free-standing GaN substrate were demonstrated. The threshold current density and voltage of these LDs were 2.8 kA/cm(2) and 4.5 V, respectively. The estimated lifetime was approximately 5000 It under 50 degreesC continuous-wave operation at an output power of 5 mW.

引用

页码：3075 / 3081

页数：7

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