Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

Room temperature pulsed-operation lasing has been achieved for the first time in an InGaN laser grown on a 6H-SiC substrate, The laser structure is an 8-well InGaN/GaN MQW having Al0.06Ga0.94N waveguide and Al0.13Ga0.87N cladding layers. The index-guided laser having uncoated cleaved facets emits at 402nm with a threshold current I-th of 1.2A (42V), corresponding to a current density of 48kA/cm(2). A narrow line width of 0.8 Angstrom is observed at 1.09 I-th. Far field measurements indicate that the devices operate in the TEM01 mode with FWHP of 5.7 and 19 degrees for the in-plane and perpendicular directions, respectively.