Shortest wavelength semiconductor laser diode

被引：422

作者：

Akasaki, I

Sota, S

Sakai, H

Tanaka, T

Koike, M

Amano, H

机构：

[1] PIONEER ELECT CORP,TSURUGA,SAITAMA 35002,JAPAN

[2] TOYODA GOSEI CO LTD,HARUHI,AICHI 452,JAPAN

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 12期

关键词：

semiconductor junction lasers; semiconductor quantum wells; gallium nitride;

D O I：

10.1049/el:19960743

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A group III, nitride based, separate confinement heterostructure (SCH) single quantum well (SQW) structure, with an active layer thickness as small as 1.5nm, was fabricated. It shows the shortest lasing from semiconductor lasers by current injection at room temperature to date. Line width is as little as 0.15nm.

引用

页码：1105 / 1106

页数：2

共 8 条

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