Continuous wave operation at room temperature of InGaN laser diodes fabricated on 4H-SiC substrates

被引：29

作者：

Kuramata, A ^{[1
]}

Kubota, S ^{[1
]}

Soejima, R ^{[1
]}

Domen, K ^{[1
]}

Horino, K ^{[1
]}

Hacke, P ^{[1
]}

Tanahashi, T ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 5A期

关键词：

GaN; InGaN; laser diode; continuous wave operation; 4H-SiC;

D O I：

10.1143/JJAP.38.L481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated, continuous wave operation at room temperature of InGaN laser diodes fabricated on 4H-SiC substrates. The threshold current and voltage were 60 mA and 8.3 V, respectively. The threshold current corresponds to a threshold current density of 4 kA/cm(2). No difference in the threshold current or voltage was observed between 4H-SiC and 6H-SiC substrates. The laser oscillation was observed up to 80 degrees C for CW operation. The peak lasing wavelength was 404.4 nm. The lifetime was 57 hours under automatic power controlled conditions with a constant output power of 1 mW at 25 degrees C.

引用

页码：L481 / L483

页数：3

共 7 条

[1]

BULMAN GE, 1997, ELECTRON LETT, V33, P556

[2]

EDMOND J, 1997, P 2 INT C NITR SEM, P448

[3] Room-temperature continuous wave operation of InGaN laser diodes with vertical conducting structure on S1C substrate [J].

Kuramata, A ;

Kubota, S ;

Soejima, R ;

Domen, K ;

Horino, K ;

Tanahashi, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (11B) :L1373-L1375

[4] InGaN laser diode grown on 6H-SiC substrate using low-pressure metal organic vapor phase epitaxy [J].

Kuramata, A ;

Domen, K ;

Soejima, R ;

Horino, K ;

Kubota, S ;

Tanahashi, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB) :L1130-L1132

[5] InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

APPLIED PHYSICS LETTERS, 1998, 72 (02) :211-213

[6] Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1997, 70 (11) :1417-1419

[7]

SOEJIMA R, 1999, IN PRESS JPN J APPL, V38

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