Room-temperature continuous wave operation of InGaN laser diodes with vertical conducting structure on S1C substrate

被引：44

作者：

Kuramata, A ^{[1
]}

Kubota, S ^{[1
]}

Soejima, R ^{[1
]}

Domen, K ^{[1
]}

Horino, K ^{[1
]}

Tanahashi, T ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 11B期

关键词：

GaN; InGaN; laser diode; continuous wave operation; SiC; vertical conducting structure;

D O I：

10.1143/JJAP.37.L1373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated for the first time room-temperature continuous wave operation of InGaN laser diodes with a vertical conducting structure fabricated on a SiC substrate. The threshold current and voltage were 84 mA and 12 V, respectiely, under pulsed operation. The threshold current corresponds to a threshold current density of 5.6kA/cm(2), which is the lowest ever reported with InGaN laser diodes on a SiC substrate. Under continuous wave operation, the threshold current and voltage were 115 mA and 10.5 V, respectiely. The peak lasing wavelength was 408.2 nm. Longitudinal modes of the optical cavity were clearly obsered. The laser oscillation was obsered up to 40 degrees C under CW operation.

引用

页码：L1373 / L1375

页数：3

共 15 条

[1]

AKASAKI I, 1996, ELECTRON LETT, V32, P11805

[2]

BULMAN GE, 1997, ELECTRON LETT, V33, P556

[3]

EDMOND J, 1997, P 2 INT C NITR SEM, P448

[4] Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates [J].

Itaya, K ;

Onomura, M ;

Nishio, J ;

Sugiura, L ;

Saito, S ;

Suzuki, M ;

Rennie, J ;

Nunoue, SY ;

Yamamoto, M ;

Fujimoto, H ;

Kokubun, Y ;

Ohba, Y ;

Hatakoshi, G ;

Ishikawa, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (10B) :L1315-L1317

[5] Room-temperature continuous-wave operation of GaInN/GaN multiquantum well laser diode [J].

Kobayashi, T ;

Nakamura, F ;

Naganuma, K ;

Tojyo, T ;

Nakajima, H ;

Asatsuma, T ;

Kawai, H ;

Ikeda, M .

ELECTRONICS LETTERS, 1998, 34 (15) :1494-1495

[6] InGaN laser diode grown on 6H-SiC substrate using low-pressure metal organic vapor phase epitaxy [J].

Kuramata, A ;

Domen, K ;

Soejima, R ;

Horino, K ;

Kubota, S ;

Tanahashi, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB) :L1130-L1132

[7]

MACK MP, 1997, INTERNET J NITRIDE S, V2, P41

[8] Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode [J].

Nakamura, F ;

Kobayashi, T ;

Tojo, T ;

Asatsuma, T ;

Naganuma, K ;

Kawai, H ;

Ikeda, M .

ELECTRONICS LETTERS, 1998, 34 (11) :1105-1107

[9] High-power, long-lifetime InGaN/GaN/AlGaN-based laser diodes grown on pure GaN substrates [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (3B) :L309-L312

[10] Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 K [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1996, 69 (20) :3034-3036

← 1 2 →